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PE29101 Sync FET Driver

High Speed FET Driver with Sync

    SG$ 5.35

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    Lead Time : 22.0 weeks

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    High Speed FET Driver with Sync

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    pSemi

    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare. From headquarters in San Diego and offices around the world, pSemi’s team explores new ways to make electronics for the connected world smaller, thinner, faster and better.

     

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    Overview

    The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement-mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging and solid-state LiDAR.

    Features

        High- and low-side FET drivers
        Dead-time control
        Fast propagation delay, 11ns
        Internal gate overvoltage management
        Sub-nanosecond rise and fall time
        2A/4A peak source/sink current
        Packaging: Flip chip
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    The PE29101 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement mode gallium nitride (GaN) FETs. The outputs of the PE29101 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. High switching speeds result in smaller peripheral components and enable new applications such as wireless power charging and solid-state LiDAR.

    Key Features

        High- and low-side FET drivers
        Dead-time control
        Fast propagation delay, 11ns
        Internal gate overvoltage management
        Sub-nanosecond rise and fall time
        2A/4A peak source/sink current
        Packaging: Flip chip


    Specifications

    DescriptionGate Driver
    Max Vin (V)6.5
    Min Output Pulse Width (ns)2
    Propagation Delay (ns)11
    Dead-time ControlResistor Settable
    Rise Time (ns)1
    Fall Time (ns)1
    PackageFlip-chip
    Package (mm)2x1.6
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