PE29100 High-speed FET Driver
High-speed FET Driver, 33 MHz
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Overview
The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement-mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip-chip package.
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The PE29100 integrated high-speed driver is designed to control the gates of external power devices, such as enhancement-mode gallium nitride (eGaN®) FETs. The outputs of the PE29100 are capable of providing switching transition speeds in the sub-nanosecond range for hard switching applications up to 33 MHz. High switching speeds result in smaller peripheral components and enable new applications like the Rezence A4WP wireless power transfer. The PE29100 is available in a flip-chip package.
Description | Gate Driver |
Max Vin (V) | 100 |
Min Output Pulse Width (ns) | 10 |
Propagation Delay (ns) | 8 |
Dead-time Control | Resistor Settable |
Rise Time (ns) | 1 |
Fall Time (ns) | 1 |
Package | Flip-chip |
Package (mm) | 2x1.6 |
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