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PE42851High power UltraCMOS SP5T RF switch

SP5T, High Power, Fast Switching, Reflective, 50Ω RF Switch

    SG$ 27.41

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    Lead Time : 22.0 weeks

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    SP5T, High Power, Fast Switching, Reflective, 50Ω RF Switch

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    Psemi


    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.

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    Overview

    The PE42851 is a HaRP™ technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave (CW). It delivers high linearity and excellent harmonics performance. It has both a standard and attenuated RX mode. No blocking capacitors are required if DC voltage is not present on the RF ports.

    Features

        Dual-mode operation: SP5T or SP3T
        HaRP™-enhanced technology
        Up to 45 dBm instantaneous power in 50 Ω
        Up to 40 dBm instantaneous power < 8:1 VSWR
        36 dB TX to RX isolation
        Low harmonics of 2fo and 3fo = –80 dBc (1.15:1 VSWR)
        ESD performance
        Packaging: 32-lead 5 × 5 mm QFN
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    The PE42851 is a HaRP™ technology-enhanced SP5T high power RF switch supporting wireless applications up to 1 GHz. It offers maximum power handling of 42.5 dBm continuous wave (CW). It delivers high linearity and excellent harmonics performance. It has both a standard and attenuated RX mode. No blocking capacitors are required if DC voltage is not present on the RF ports.

    Key Features

        Dual-mode operation: SP5T or SP3T
        HaRP™-enhanced technology
        Up to 45 dBm instantaneous power in 50 Ω
        Up to 40 dBm instantaneous power < 8:1 VSWR
        36 dB TX to RX isolation
        Low harmonics of 2fo and 3fo = –80 dBc (1.15:1 VSWR)
        ESD performance
        Packaging: 32-lead 5 × 5 mm QFN


    Specifications

    DescriptionSPDT (R)
    Min Freq.100 MHz
    Max Freq.1000 MHz
    Max Typ. IL (dB)0.40
    Min Typ. IL (dB)0.25
    Max Typ. Iso (dB)36
    Min Typ. Iso (dB)30
    P1/0.1dB (dBm)-/45.5
    IIP3 (dBm)42
    Package32L QFN
    Package (mm)5x5
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