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PE29102 High Speed FET Driver

High Speed FET Driver

    SG$ 5.10

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    Lead Time : 22.0 weeks

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    High Speed FET Driver

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    Psemi


    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.


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    Overview


    The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as Class D audio and wireless charging.

    Features

        High- and low-side FET drivers
        Dead-time control
        Fast propagation delay, 9 ns
        Tri-state enable mode
        Sub-nanosecond rise and fall time
        2A/4A peak source/sink current
        Packaging: Flip chip
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    The PE29102 is an integrated high-speed driver designed to control the gates of external power devices, such as gallium nitride (GaN) FETs. The outputs of the PE29102 are capable of providing switching transition speeds in the sub-nanosecond range for switching applications up to 40 MHz. The PE29102 is optimized for matched dead time and offers best-in-class propagation delay to improve system bandwidth. High switching speeds result in smaller peripheral components and enable innovative designs for applications such as Class D audio and wireless charging.

    Key Features

        High- and low-side FET drivers
        Dead-time control
        Fast propagation delay, 9 ns
        Tri-state enable mode
        Sub-nanosecond rise and fall time
        2A/4A peak source/sink current
        Packaging: Flip chip


    Specifications

    DescriptionGate Driver
    Max Vin (V)60
    Min Output Pulse Width (ns)5
    Propagation Delay (ns)9.1
    Dead-time ControlResistor Settable
    Rise Time (ns)0.9
    Fall Time (ns)0.9
    PackageFlip-chip
    Package (mm)2x1.6
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