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PE42451 SP5T High Iso RF switch

SP5T, High Iso, Absorptive, 50Ω RF Switch

    SG$ 6.00

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    Lead Time : 22.0 weeks

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    SP5T, High Iso, Absorptive, 50Ω RF Switch

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    Psemi


    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.


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    Overview

    The PE42451 is a HaRP™-enhanced absorptive SP5T RF switch developed on the UltraCMOS® process technology. This general-purpose switch is comprised of five symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a three-pin low voltage CMOS control interface and an optional external Vss feature (VssEXT). High ESD tolerance and no blocking capacitor requirements give this excellent integration and ruggedness.

    Features

        HaRP™-enhanced UltraCMOS® device
        Five symmetric, absorptive RF ports
        High isolation
        IIP2 of 95 dBm, IIP3 of 58 dBm
        High ESD tolerance of 3500V HBM
        Optional external Vss control (VssEXT)
        Three-pin CMOS logic control
        No blocking capacitors required
        Packaging: 24-lead 4 × 4 mm QFN
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    The PE42451 is a HaRP™-enhanced absorptive SP5T RF switch developed on the UltraCMOS® process technology. This general-purpose switch is comprised of five symmetric RF ports and has very high isolation. An on-chip CMOS decode logic facilitates a three-pin low voltage CMOS control interface and an optional external Vss feature (VssEXT). High ESD tolerance and no blocking capacitor requirements give this excellent integration and ruggedness.

    Key Features

        HaRP™-enhanced UltraCMOS® device
        Five symmetric, absorptive RF ports
        High isolation
        IIP2 of 95 dBm, IIP3 of 58 dBm
        High ESD tolerance of 3500V HBM
        Optional external Vss control (VssEXT)
        Three-pin CMOS logic control
        No blocking capacitors required
        Packaging: 24-lead 4 × 4 mm QFN


    Specifications

    DescriptionSP5T (A)
    Min Freq.450 MHz
    Max Freq.4000 MHz
    Max Typ. IL (dB)2.25
    Min Typ. IL (dB)1.60
    Max Typ. Iso (dB)68
    Min Typ. Iso (dB)50
    P1/0.1dB (dBm)35.0/-
    IIP3 (dBm)58
    Package24L QFN
    Package (mm)4x4
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