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PE42525 SP4T, High Iso, Absorptive, 50Ω Instrumentation Switch

SPDT, 60GHz, Low IL, Reflective, Die

    SG$ 88.22

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    Lead Time : 3.0 weeks

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    SPDT, 60GHz, Low IL, Reflective, Die

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      Psemi


      pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.


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      Overview

      The PE42525 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin-compatible to the PE42524 and the PE426525. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement, microwave backhaul, radar and military communications (mil-comm) applications. At 50 GHz, the PE42525 exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors are required if DC voltage is not present on the RF ports.

      Features

          Wideband support up to 60 GHz
          Low insertion loss
          Fast switching time of 8 ns
          High port to port isolation
          High linearity: IIP3 of 48 dBm
          Flip-chip die, pin-to-pin compatible to the PE42524 and the PE426525

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      The PE42525 is a HaRP™ technology-enhanced reflective SPDT RF switch die that supports a wide frequency range from 9 kHz to 60 GHz. This wideband flip-chip switch is pin-compatible to the PE42524 and the PE426525. It delivers low insertion loss, fast switching time and high isolation performance, making this device ideal for test and measurement, microwave backhaul, radar and military communications (mil-comm) applications. At 50 GHz, the PE42525 exhibits 1.9 dB insertion loss and 37 dB isolation. No blocking capacitors are required if DC voltage is not present on the RF ports

      Key Features

          Wideband support up to 60 GHz
          Low insertion loss
          Fast switching time of 8 ns
          High port to port isolation
          High linearity: IIP3 of 48 dBm
          Flip-chip die, pin-to-pin compatible to the PE42524 and the PE426525


      Specifications

      DescriptionSPDT (R)
      Min Freq.9 kHz
      Max Freq.60 GHz
      Max Typ. IL (dB)2.70
      Min Typ. IL (dB)0.90
      Max Typ. Iso (dB)80
      Min Typ. Iso (dB)36
      P1/0.1dB (dBm)35.0/-
      IIP3 (dBm)48
      PackageFlip-chip
      Package (mm)₋

      Specifications

      DescriptionSPDT (R)
      Min Freq.10 MHz
      Max Freq.40 GHz
      Max Typ. IL (dB)5.50
      Min Typ. IL (dB)0.60
      Max Typ. Iso (dB)84
      Min Typ. Iso (dB)33
      P1/0.1dB (dBm)32.5/-
      IIP3 (dBm)52
      PackageFlip-chip
      Package (mm)₋
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