1. Products
  2. PE64904 UltraCMOS® Digitally Tunable Capacitor
SGD Pricelist
Manufacturing Company :    

PE64904 UltraCMOS® Digitally Tunable Capacitor

Digitally Tunable Capacitor (100-3000 MHz) SPI Interface

    SG$ 3.04

    This combination does not exist.

    Lead Time : 22.0 weeks

    Add to Cart Get Best Price

    Digitally Tunable Capacitor (100-3000 MHz) SPI Interface

    Terms and Conditions
    30-day money-back guarantee
    Shipping: 2-3 Business Days

    Psemi


    pSemi Corporation is a Murata company driving semiconductor integration. pSemi builds on Peregrine Semiconductor’s 30-year legacy of technology advancements and strong IP portfolio but with a new mission—to enhance Murata’s world-class capabilities with high-performance semiconductors. With a strong foundation in RF integration, pSemi’s product portfolio now spans power management, connected sensors, optical transceivers, antenna tuning and RF frontends. These intelligent and efficient semiconductors enable advanced modules for smartphones, base stations, personal computers, electric vehicles, data centers, IoT devices and healthcare.


    FIND OUT MORE

    Overview

    The PE64904 is a DuNE™-enhanced digitally tunable capacitor (DTC) based on pSemi's UltraCMOS® technology. DTC products provide a monolithically integrated impedance tuning solution for demanding RF applications. The PE64904 offers high RF power handling and ruggedness while meeting challenging harmonic and linearity requirements. This highly versatile product can be used in series or shunt configurations to support a wide variety of tuning circuit topologies. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing are integrated on-chip and no external bypassing or filtering components are required.

    pSemi's DuNE™ technology enables excellent linearity and exceptional harmonic performance. DuNE devices deliver performance superior to GaAs devices with the economy and integration of conventional CMOS.

    Features

        3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
        DuNE™-enhanced UltraCMOS® device
        5-bit 32-state digitally tunable capacitor
        Series configuration C = 0.60 - 4.60 pF (7.7:1 tuning ratio) in discrete 129 fF steps
        Shunt configuration C = 1.14 - 5.10 pF (4.6:1 tuning ratio) in discrete 129 fF steps
        High RF power handling (up to 38 dBm, 30 Vpk RF) and high linearity
        Wide power supply range (2.3 to 3.6V) and low current consumption (typ. 140 μA at 2.6V)
        Excellent 1.5 kV HBM ESD tolerance on all pins
        Packaging: 10-lead 2 × 2 × 0.45 mm QFN package
    This is a preview of the recently viewed products by the user.
    Once the user has seen at least one product this snippet will be visible.

    Recently viewed Products


    The PE64904 is a DuNE™-enhanced digitally tunable capacitor (DTC) based on pSemi's UltraCMOS® technology. DTC products provide a monolithically integrated impedance tuning solution for demanding RF applications. The PE64904 offers high RF power handling and ruggedness while meeting challenging harmonic and linearity requirements. This highly versatile product can be used in series or shunt configurations to support a wide variety of tuning circuit topologies. The device is controlled through the widely supported 3-wire (SPI compatible) interface. All decoding and biasing are integrated on-chip and no external bypassing or filtering components are required.

    pSemi's DuNE™ technology enables excellent linearity and exceptional harmonic performance. DuNE devices deliver performance superior to GaAs devices with the economy and integration of conventional CMOS

    Key Features

        3-wire (SPI compatible) serial interface with built-in bias voltage generation and ESD protection
        DuNE™-enhanced UltraCMOS® device
        5-bit 32-state digitally tunable capacitor
        Series configuration C = 0.60 - 4.60 pF (7.7:1 tuning ratio) in discrete 129 fF steps
        Shunt configuration C = 1.14 - 5.10 pF (4.6:1 tuning ratio) in discrete 129 fF steps
        High RF power handling (up to 38 dBm, 30 Vpk RF) and high linearity
        Wide power supply range (2.3 to 3.6V) and low current consumption (typ. 140 μA at 2.6V)
        Excellent 1.5 kV HBM ESD tolerance on all pins
        Packaging: 10-lead 2 × 2 × 0.45 mm QFN package

    Specifications

    Description5-bit; 32 states
    Min Freq.100 MHz
    Max Freq.3000 MHz
    Max Typ. Shunt Capacitance (pF)5.10
    Min Typ. Shunt Capacitance (pF)1.10
    Tuning Ratio4.6:1
    Max Typ. Quality Factor @ Cmin35
    Min Typ. Quality Factor @ Cmin10
    InterfaceSPI
    Package10L QFN
    Package (mm)2x2
    Submit

    ACCESSORIES